PRODUCTS

Smart-GaNᵀᴹSiP

Smart-GaNTMSiP

650V, 70 – 260mΩ Rdson

Integrated GaN HEMT and driver IC for extra protection and fast switching

Flash-SBDᵀᴹ

Flash-SBDsTM

2A – 8A

The world’s first GaN-on-Si SBD

GaN HEMTs and Bare Die

GaN HEMTs and Bare Die

650V, 70 – 260mΩ Rdson

GaN HEMT as bare die or packaged device

SiC SBD and MOSFET

SiC SBD and MOSFET

650 V-1200 V, 5 A – 40 A, 20 mOhm – 80 mOhm

SiC Schottky Barrier Diodes and MOSFETs for industrial and mobility applications

Part Number Family VDS (V) IF(A) Package Datasheet
NW6502RD1 GaN SBD 650 2 DFN Contact us
NW6504RZ1 GaN SBD 650 4 TO220 Contact us
NW6508RZ1 GaN SBD 650 8 TO220 Contact us
123456 a b c 12 Contact us
Part Number Family VDS (V) RDS,ON (typ.) (mΩ) Package Datasheet
NW6503EBTL GaN E-mode HEMTs 650 28 TOLL
NW6507EBD8 GaN E-mode HEMTs 650 153 DFN 8×8
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Part Number Family VR(V) IF(A) Package Datasheet
NW12002IX1 SiC SBD 1200 2 TO252
NW12005IX1 SiC SBD 1200 5 TO252
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Part Number Family VDS (V) RDS,ON (typ.) (mΩ) Package Datasheet
NW6506CL1 SiC MOSFETs 650 60 TOLL
NW6506CJ1 SiC MOSFETs 650 60 TO247